Designing a perfect material using the bottom-up approach to achieve a unique set of properties, e.g., electrical, mechanical, and optical, is a long-standing vision of nanotechnology. However, defects are formed during synthesis and obstruct this goal; there is a common notion in the literature that defects deteriorate the structural integrity of the material. Here, we will demonstrate that decorating a nanowire (NW) with equally spaced stacking faults (SFs) improves the mechanical properties of the NW, Young’s Modulus and critical stress, beyond their perfect counterparts. The ZnO nanostructures were considered as our model material due to their wide range of applications in electronic and semiconductor industries. Our results show that a highly defected NW, SF density of 780 SF/μm, increases the compressive Young’s Modulus and critical stress by %14.73 and %31, respectively; this enhancement was measured in comparison to the perfect structure. To ensure the validity of this strengthening, NWs were modeled over a wide range of temperature, 100K-500K. Interestingly, the same pattern was observed for high temperature, 500K, which makes this decorative strengthening efficient even for high-temperature applications. This novel phenomenon can be explained by an increase in the intrinsic strains (local strain distribution) due to the presence of defects and overlapping the associated stress fields. Our results reveal the mechanism behind this enhancement and subsequently open a roadmap to design stronger nanowires (NWs).