Amorphization in boron carbide (B4C) and boron-rich boron carbide (B-rich BC) have been previously studied in a Diamond Anvil Cell (DAC). The threshold pressure to induce amorphization in these samples have been determined, and the extent of amorphization has been quantified. Now, silicon-doped boron carbide (SI-BC) and boron suboxide (B6O) will be studied in a DAC to observe, evaluate, and quantify any amorphous-like behavior present in these materials. It is believed that these materials will amorphize in manner similar to that of boron carbide, so these experiments will give further insight into that phenomena. This study will show how the new chain structure in Si-BC mitigates amorphization, and B6O will give insight into a rhombohedral boride material amorphizing without having a chain structure, such as boron carbide has. Experiments will be self-consistent with previous B4C and B-rich BC DAC experiments, done in-situ in a Renishaw Raman Microspectroscopy system, using a 532 nm laser source.