SiC is a material of use for defense and space applications primarily for its high hardness, high bulk modulus and high melting temperature. The above well-known ceramic material exists in numerous polymorph varieties and exhibits a plastic behavior followed by a brittle nature. Continuum simulation of the material assumes a plasticity rule which needs detailed and comprehensive experimental validation; however, validation becomes extensively difficult due to the existence of material in different polymorphic forms coupled with the anisotropy of the material and presence of point and line defects. A systematic comprehensive study is presented to determine the yield surface of the material using molecular dynamic simulations of single crystal SiC of different polymorphs.
