The exploration of Swift Heavy Ions (SHI) in semiconductors is crucial due to the ion’s ability to induce material damage. One form of such damage is the creation of latent tracks during irradiation when the ions collide with the semiconductor material. Various physical processes…
Phase change materials (PCMs) have gained significant attention as electrical/photonic materials due to their fast transition between two distinct phases. In this study, we propose a thermodynamically consistent coupled phase-field (PF) model that incorporates various physical phenomena, including phase transition (PT), heat transfer, thermoelectricity,…
A PCB is a multi-material assembly, whose constituents present very different coefficients of thermal expansion. Because of this CTE mismatch, stresses appear inside the PCB when the latter undergoes thermal loading and failure can occur. During qualification, PCB must pass successfully several tests. Two…
With a large band gap and low intrinsic carrier concentration, β-Ga2O3 suggests a robust platform for operation of electronic devices at a high temperature. The performance Ga2O3 transistors with different gate metals has been characterized in vacuum and air at temperatures up to 500…
The superior material properties give GaN heterostructure based HEMT devices a unique stability, reliability, and robustness for their use in extreme environments. The trap related issues due to inherent defects in the material system pose threat to the stable and reliable operation of the…